LGE ktc3876 free download

File name ktc3876.pdf

KTC3876 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-400 Complementary to KTA1505 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE1 VCE=1V, IC= 100mA 70 400 DC current gain VCE=6V, IC= 400mA O 25 hFE2 Y 40 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V base-emitter voltage VBE VCE=1V, IB= 100mA 1 V Transition frequency fT VCE=6V, IC=20mA 300 MHz Collector output c