KEC ktc3572 free download

File name ktc3572.pdf

SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. B D Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS A 7.20 MAX B 5.20 MAX A C 0.60 MAX P D 2.50 MAX MAXIMUM RATING (Ta=25 ) DEPTH:0.2 E 1.15 MAX CHARACTERISTIC SYMBOL RATING UNIT C F 1.27 S G 1.70 MAX G Collector-Base Voltage VCBO 120 V Q H 0.55 MAX K J _ 14.00 + 0.50 J Collector-Emitter Voltage VCEO 100 V