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File name:cem4279.pdf
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Model:cem4279 🔎
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Descr: . Electronic Components Datasheets Active components Transistors CET cem4279.pdf
Group:Electronics > Components > Transistors
Uploaded:27-07-2020
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CEM4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS

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