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BUL704 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European 3 2 Directive 1 TO-220 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. Internal schematic diagram It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Applications Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast half- bridge voltage fed Order codes Part Number Marking Package Packing BUL704 BUL704 TO-220 Tube May 2006 Rev 1 1/11 www.st.com 11 BUL704 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 BUL704 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (V BE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 10 V IC Collector current 4 A ICM Collector peak