KEC kgh25n120nda free download

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SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V @TC=25 40 A Collector Current IC @TC=100 25 A Pulsed Collector Current ICM* 75 A Diode Continuous Forward Current @TC=100 IF 25 A Diode Maximum Forward Current IFM 110 A @TC=25 300 W Maximum Power Dissipation PD @TC=100 120 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) R JC 0.4 /W Thermal Resistance, Junction to Case (DIODE) R JC 1.2 /W 2009. 2. 19 Revision No : 2 1/6 KGH25N120NDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=3mA 1200 - - V Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 3 mA Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA Gate Threshold Voltage VGE(th) VGE=VCE, IC=25mA 3.5 5.5 7.5 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=25A -