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File name:bul310fp.pdf
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Mfg:ST
Model:bul310fp 🔎
Original:bul310fp 🔎
Descr: . Electronic Components Datasheets Active components Transistors ST bul310fp.pdf
Group:Electronics > Components > Transistors
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File name bul310fp.pdf

BUL310FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125oC s LARGE RBSOA 3 s FULLY MOLDED ISOLATED PACKAGE 2 1 s 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS TO-220FP s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 1000 V V CEO Collector-Emitter Voltage (IB = 0) 500 V V EBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 V I CM Collector Peak Current (tp <5 ms) 10 A IB Base Current 3 A I BM Base Peak Current (tp <5 ms) 4 A o P t ot Total Dissipation at T c = 25 C 36 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C April 1998 1/6 BUL310FP THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 3.5 C/W

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