KEC kmb6d0dn30qa free download

File name kmb6d0dn30qa.pdf

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES VDSS=30V, ID=6A. A DIM MILLIMETERS Drain-Source ON Resistance. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 RDS(ON)=28m (Max.) @VGS=10V B2 _ 8 5 6.02 + 0.3 RDS(ON)=42m (Max.) @VGS=4.5V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 Super High Dense Cell Design H _ 1.63 + 0.2 High Power and Current Handing Capability 1 4 L _ 0.65 + 0.2 P 1.27