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2SD1468(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A DC current gain hFE VCE=3V, IC=100mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.4 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 50 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE Rank Q R S Range 1