HT Semiconductor 2sb1188 free download

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2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Low VCE(sat). 1 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V Collector cut-off current ICBO VCB=-20 V , IE=0 -1 A Emitter cut-off current IEBO VEB=-4 V , IC=0 -1 A DC current gain * hFE VCE=-3V, IC= -0.5A 82 390 Collector-emitter saturation voltage * VCE(sat) IC=-2A, IB= -0.2A -0.8 V Transition frequency fT VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz Output capacitance Cob VCB=-10V, IE=0 ,f=1MHz 50 pF * Measured using pulse current. CLASSIFICATION OF hFE Rank P Q