KEC kgt15n60fda free download

File name kgt15n60fda.pdf

SEMICONDUCTOR TECHNICAL DATA KGT15N60FDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 5us(@TC=100 ) Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V @Tc=25 15 A Collector Current IC @Tc=100 7.5 A Pulsed Collector Current ICM* 30 A Diode Continuous Forward Current @Tc=25 IF 15 A Diode Maximum Forward Current IFM* 45 A @Tc=25 41.6 W Maximum Power Dissipation PD @Tc=100 17 W Tj *Repetitive rating : Pulse width limited by max. junction temperature Maximum Junction Temperature 150 Storage Temperature Range Tstg -55 to + 150 E THERMAL CHARACTERISTIC C G CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 3.0 /W Thermal Resistance, Junction to Case (DIODE) Rt h JCD 3.6 /W Thermal Resistance, Junction to Ambient Rt h JA 62.5 /W 2012. 7. 13 Revision No : 1 1/8 KGT15N60FDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage B