Wietron bss123 free download

File name bss123.pdf

BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: 1 3 *Low On-Resistance : 6.0 GATE 1 *Low Input Capacitance: 20PF 2 *Low Out put Capacitance : 9PF 2 *Low Threshole :2.8V SOURCE *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGS _ +20 V Continuous Drain Current (TA=25 C) ID 170 mA Pulsed Drain Current (1) IDM 680 mA Power Dissipation (TA=25 C)(2) PD 225 mW Maximax Junction-to-Ambient R JA 556 C/W Operating Junction and Storage C TJ, Tstg -55 to 150 Temperature Range Device Marking BSS123=SA WEITRON http://www.weitron.com.tw BSS123 Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage V(BR)DSS 100 - - V VGS=0V, ID=250 uA Gate-Threshold Voltage VGS (th) 0.8 VDS=VGS , ID=1.0 mA - 2.8 V Gate-body Leakage Current IGSS - - 50 nA VGS= 20V, VDS=0V Zero Gate Voltage Drain Current VDS=0V, VGS=100V, Tj=25 C IDSS - - 15 uA VDS=0V, VGS=100V, Tj=125 C - - 60 Static Drain-to-Source On-Resistance VGS=10V, ID=0.1A rDS (on) - 5.0 6.0 Forward Trans Conductance g fs 8.0 - - ms VDS=25V, ID=100 mA Dynamic Chara