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Various electronics service manuals| File information: | |
| File name: | Si4800BDY.pdf [preview Si4800BDY] |
| Size: | 51 kB |
| Extension: | |
| Mfg: | Various |
| Model: | Si4800BDY 🔎 |
| Original: | Si4800BDY 🔎 |
| Descr: | . Electronic Components Datasheets Various Si4800BDY.pdf |
| Group: | Electronics > Other |
| Uploaded: | 30-07-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name Si4800BDY.pdf Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 30 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View S Ordering Information: Si4800BDY N-Channel MOSFET Si4800BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 TA = 25_C 9 6.5 Continuous Drain Current (TJ = 150_C)a, b ID TA = 70_C 7.0 5.0 A Pulsed Drain Current (10 ms Pulse Width) IDM 40 Continuous Source Current (Diode Conduction)a, b IS 2.3 TA = 25_C 2.5 1.3 Maximum Power Dissipationa, b PD W TA = 70_C 1.6 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Limits Parameter | ||
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