ON Semiconductor nimd6302r2 free download

File name nimd6302r2.pdf

NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced series of power MOSFET which http://onsemi.com utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while 5.0 AMPERES incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche 30 VOLTS energy is specified to eliminate guesswork in designs where inductive RDS(on) = 50 mW loads are switched and offer additional safety margin against unexpected voltage transients. ISOLATED DUAL PACKAGING This HDPlus device features an integrated Gate-to-Source clamp Drain1 Drain2 for ESD protection. Also, this device features a mirror FET for current monitoring. Gate1 Mirror Main Gate2 Mirror Main Features FET FET