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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:ksh29.pdf
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Mfg:Samsung
Model:ksh29 🔎
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Descr: . Electronic Components Datasheets Active components Transistors Samsung ksh29.pdf
Group:Electronics > Components > Transistors
Uploaded:31-07-2020
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KSH29/29C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PAK D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.ACK, "- I Suffi x) 1 Electrically Similar to Popular TIP29 and TIP29C 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit I-PAK Collector Base Voltage : KSH29 VCBO 40 V : KSH29C 100 V Collector Emitter Voltage : KSH29 VCEO 40 V : KSH29C 100 V Emitter Base Voltage VEBO 5 V 1 Collector Current (DC) IC 1 A Collector Current (Pulse) IC 3 A 1. Base 2. Collector 3. Emitter Base Current IB 0.4 A Collector Dissipation ( T C=25 &) PC 15 W Collector Dissipation (T A=25 &) PC 1.56 W Junction Temperature TJ 150 & Storage Temperature T STG -65 ~ 150 & ELECTRICAL CHARACTERISTICS (Tc =25&) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : KSH29 VCEO (sus) IC = - 30mA, IB = 0 40 V : KSH29C 100 V Collector Cutoff Current : KSH29 ICEO VCE = 40V, IB = 0 50 uA : KSH29C VCE = 60V, IB = 0 50 uA Collector Cutoff Current : KSH29 ICES VCE = 40V, VBE = 0 20 uA : KSH29C VCE = 100V, VBE = 0 20 uA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 1 mA * DC Current Gain hFE VCE = 4V, IC = 0.2A 40

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