KEC ku082n03q free download

File name ku082n03q.pdf

SEMICONDUCTOR KU082N03Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low TENTATIVE on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. H FEATURES T D P G L VDSS=30V, ID=14A. U Drain to Source On Resistance. RDS(ON)=8.2m (Max.) @ VGS=10V A RDS(ON)=14.7m (Max.) @ VGS=4.5V DIM MILLIMETERS A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 8 5 _ B2 6.02 + 0.3 D _ 0.4 + 0.1 MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) B1 B2 G 0.15+0.1/-0.05 CHARACTERISTIC SYMBOL RATING UNIT 1 H _