KEC kgt25n120ndh free download

File name kgt25n120ndh.pdf

SEMICONDUCTOR TECHNICAL DATA KGT25N120NDH General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V @Tc=25 50 A Collector Current IC @Tc=100 25 A Pulsed Collector Current ICM* 90 A Diode Continuous Forward Current @Tc=100 IF 25 A Diode Maximum Forward Current IFM 150 A @Tc=25 225 W Maximum Power Dissipation PD @Tc=100 90 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature E THERMAL CHARACTERISTIC C G CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.57 /W Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 /W Thermal Resistance, Junction to Ambient Rt h JA 40 /W 2011. 8. 9 Revision No : 0 1/7 KGT25N120NDH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1mA