GSME gm2302 free download

File name gm2302.pdf

Guilin Strong Micro-Electronics Co.,Ltd. GM2302 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 20 V - Gate- Source Voltage VGS +10 V - Drain Current (continuous) ID 3.5 A - Drain Current (pulsed) IDM 11 A - Total Device Dissipation PD 1000 mW TA=25 25 Junction TJ 150 Storage Temperature Tstg -55to+150 DEVICE MARKING GM2302=A2 GM2302 2302= Guilin Strong Micro-Electronics Co.,Ltd. GM2302 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 20 -- -- V -(ID = 250uA ,VGS=0V) Gate Threshold Voltage VGS(th) 0.5 -- 1.5 V (ID = 250uA ,VGS= VDS) Diode Forward Voltage Drop VSD -- -- 1.5 V (IS= 0.75A ,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= 16V) IDSS -- -- 1 uA (VGS=0V, VDS= 16V, TA=55) 10 Gate Body Leakage IGSS -- -- +100 nA (VGS=+10V, VDS=0V) Static Drain-Source On-State Resistance (ID=2.8A ,VGS=4.5V) RDS(ON) -- -- 60 m (ID=2A ,VGS=2.5V) 80 Input Capacitance CISS -- -- 800 pF (VGS=0V, VDS= 10V,f=1MHz) Common Source Output Capacitance COSS -- -- 200 pF (VGS=0V, VDS= 10V,f=1MHz) Turn-ON Time t(on) -- -- 20 ns (VDS= 10V, ID= 3.5A, RGEN=10) Turn-OFF Time t(off) -- -- 80 ns (VDS= 10V, ID= 3.5A, RGEN=10) Pulse Width<300s; Duty Cycle<2.0% Guilin Strong Micro-Electronics Co.,Ltd. GM2302 DIMENSION