KEC kmb6d0dn30qb free download

File name kmb6d0dn30qb.pdf

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 RDS(ON)=28m (Max.) @VGS=10V 8 5 B2 _ 6.02 + 0.3 RDS(ON)=42m (Max.) @VGS=4.5V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 Super High Dense Cell Design 1 H _ 1.63 + 0.2 4 High Power and Current Handing Capability