WingShing 2sc4596e free download

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2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 100 V VCEO Collector-emitter voltage (open base) - 60 V IC Collector current (DC) - 5 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 25 W VCEsat Collector-emitter saturation voltage IC = 2A; IB = 0.2A - 1.5 V VBE Emitter forward voltage IE = 2A 1.5 V tf Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 100 V VCEO Collector-emitter voltage (open base) - 60 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 5 A IB Base current (DC) - 1 A Ptot Total power dissipation Tmb 25 - 25 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICBO Collector-base cut-off current VCB=100V 0.1 mA IEBO Emitter-base cut-off current VEB=5V 0.1 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 60 V VCEsat Collector-emitter saturation voltages IC =2A; IB = 0.2A 1.5 V hFE DC current gain IC =1A; VCE = 5V