Samsung tip115 free download

File name tip115.pdf

PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60 V 1.Base 2.Collector 3.Emitter : TIP116 -80 V : TIP117 -100 V Collector Emitter Voltage :TIP115 VCEO -60 V :TIP116 -80 V :TIP117 -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -2 A Collector Current (Pulse) IC -4 A Base Current (DC) IB -50 ~ Collector Dissipation ( T A=5 ) PC 2 W Collector Dissipation ( T C=5 ) PC 50 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T C =25) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = -30mA, IB = 0 : TIP115 -60 V : TIP116 -80 V : TIP117 -100 V Collector Cutoff Current : TIP115 ICEO VCE = -30V, IB = 0 -2 mA : TIP116 VCE = -40V, IB = 0 -2 mA : TIP117 VCE = -50V, IB = 0 -2 mA Collector Cutoff Current : TIP115 ICBO VCB = -60V, IE = 0 -1 mA : TIP116 VCB = -80V, IE = 0 -1 mA : TIP117 VCB = -100V, IE = 0 -1 mA Emitter Cutoff Current IEBO VBE = -5V, IC = 0