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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:ced6601_ceu6601.pdf
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Descr: . Electronic Components Datasheets Active components Transistors CET ced6601_ceu6601.pdf
Group:Electronics > Components > Transistors
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CED6601/CEU6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS

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