LGE s9015 to-92 free download

File name s9015_to-92.pdf

S9015(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.45 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.05 A DC current gain hFE VCE=-5V, IC= -1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V VCE=-5V, IC= -10mA Transition frequency fT 100 MHz f=30MHz CLASSIFICATION OF hFE(1) Rank A B C D Range 60-150 100-300 200-600 400-1000