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MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 Tstg Storage Temperature Range -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=70V, IE=0 1 mA Emitter cut-off current IEBO VEB=5V, IC=0 5 mA hFE(1) * VCE=4V, IC=4A 20 100 DC current gain hFE(2) * VCE=4V, IC=10A 5 VCE(sat) * IC=4A, IB=0.4A 1.1 V Collector-emitter saturation voltage VCE(sat) * IC=10A, IB=3.3A 8 V Base-emitter voltage VBE* VCE=4V, IC=4A 1.8 V Transition frequency fT VCE=10V, IC=0.5A 2 MHz Note:*Pulse test: tp300S, 0.02. MJE3055(NPN) TO-220 Tran