LGE 2sc2412 sot-23 free download

File name 2sc2412_sot-23.pdf

2SC2412 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A DC current gain hFE VCE=6V,IC=1mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V Transition frequency fT VCE=12V,IC=-2mA,f=100MHz 160 MHz Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 2.0 3.5 pF CLASSIFICATION OF hFE Rank Q R S Range 120 - 270 180 - 390 270 - 560 Marking BQ BR BS 2SC2412 SOT-23 Transistor(NPN) Typical Characteristics 2SC2412 SOT-23 Transistor(NPN)