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Descr: . Electronic Components Datasheets Active components Transistors ST stp10nk80z.pdf
Group:Electronics > Components > Transistors
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STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTMPower MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V < 0.90 9A 160 W STP10NK80ZFP 800 V < 0.90 9A 40 W STW10NK80Z 800 V < 0.90 9A 160 W 3 s TYPICAL RDS(on) = 0.78 1 2 s EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING 3 2 REPEATIBILITY 1 TO-247 DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip- based PowerMESHTM layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES s DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP10NK80Z P10NK80Z TO-220 TUBE STP10NK80ZFP P10NK80ZFP TO-220FP TUBE STW10NK80Z W10NK80Z TO-247 TUBE February 2003 1/11 STP10NK80Z - STP10NK80ZFP - STW10NK80Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP10NK80Z STP10NK80ZFP STW10NK80Z VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage

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