KEC kmb6d0dn35qa free download

File name kmb6d0dn35qa.pdf

SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES VDSS=35V, ID=6A. A DIM MILLIMETERS Drain-Source ON Resistance. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 RDS(ON)=28m (Max.) @VGS=10V B2 _ 8 5 6.02 + 0.3 RDS(ON)=42m (Max.) @VGS=4.5V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 Super High Dense Cell Design H _ 1.63 + 0.2 Very fast switching 1 4 L _ 0.65 + 0.2 P