File information: | |
File name: | 2n7002.pdf [preview 2n7002] |
Size: | 224 kB |
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Mfg: | LGE |
Model: | 2n7002 🔎 |
Original: | 2n7002 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors LGE 2n7002.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 05-08-2020 |
User: | Anonymous |
Multipart: | No multipart |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name 2n7002.pdf 2N7002 Mosfet (N-Channel) SOT-23 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: 7002 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10 A 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS= |
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