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Descr: . Electronic Components Datasheets Active components Transistors CET ceh2609.pdf
Group:Electronics > Components > Transistors
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CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 3.5A, RDS(ON) = 60m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100m @VGS = -4.5V. RDS(ON) = 145m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1(6) D2(4) Lead free product is acquired. 4 Surface mount Package. 5 6 G1(1) G2(3) 3 2 1 S1(5) S2(2) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS

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