HT Semiconductor bc847bv free download

File name bc847bv.pdf

BC847BV DUAL TRANSISTOR (NPN) SOT-563 FEATURES Epitaxial Die Construction Complementary PNP Type Available (BC857BV) Ultra-Small Surface Mount Package Marking: K4V MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.15 W RJA Thermal Resistance. Junction to Ambient Air 833 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1A,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA 200 450 IC=10mA,IB=0.5mA 100 Collector-emitter saturation voltage VCE(sat) mV IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA 700 Base-emitter saturation voltage VBE(sat) mV IC=100mA,IB=5mA 900 VCE=5V,IC=2mA 580 660 700 Base-emitter voltage