LGE bc237-239 free download

File name bc237-239.pdf

BC237/238/239(NPN) TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Emitter Voltage BC237 45 Dimensions in inches and (millimeters) VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 350 mW Thermal Resistance, RJA 357 /W Junction to Ambient RJC Thermal Resistance, Junction to Case 125 /W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 BC237/238/239(NPN) TO-92 Bipolar Transistors ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT IC=100A, IE=0 BC237 50 Collector-base breakdown voltage V(BR)CBO V BC238/239 30 IC=2mA, IB=0 BC237 45 Collector-emitter breakdown voltage V(BR)CEO V BC238/239 25 IE=100A, IC=0 BC237 6 Emitter-base breakdown voltage V(BR)EBO V BC238/239 5 VCE=50V, VBE=0 BC237 Collector cut-off current ICBO