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STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 , 40 A, DPAK, IPAK STripFETTM V Power MOSFET Features Type VDSS RDS(on) max ID STD40N2LH5 25 V 0.0118 40 A STU40N2LH5 25 V 0.0124 40 A 3 3 2 RDS(on) * Qg industry benchmark 1 1 Extremely low on-resistance RDS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This STripFETTM V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on- state resistance providing also one of the best-in- class figure of merit (FOM). Table 1. Device summary Order codes Marking Package Packaging STD40N2LH5 40N2LH5 DPAK Tape and reel STU40N2LH5 40N2LH5 IPAK Tube September 2009 Doc ID 14919 Rev 3 1/15 www.st.com 15 Contents STD40N2LH5, STU40N2LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 Electrical ratings 1 Electrical ratings