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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Model:d965 🔎
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Descr: . Electronic Components Datasheets Active components Transistors LGE d965.pdf
Group:Electronics > Components > Transistors
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D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 42 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A hFE(1) VCE=2V, IC= 0.15 mA 150 DC current gain hFE(2) VCE= 2V,IC = 500 mA 340 2000 hFE(3) VCE=2V, IC = 2A 150 Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V VCE=6V, Transition frequency fT 150 MHz IC=50mA,f=30MHz CLASSIFICATION OF hFE(2) Rank R T V Range 340-600 560-950 900-2000 D965(NPN) TO-92 Transistors Typical Characteristics

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