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STP11NM80 - STB11NM80 STF11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 - 11A TO-220/FP/D2PAK/TO-247 MDmeshTMPower MOSFET TARGET DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STP11NM80 800 V < 0.40 14 *nC 11 A STF11NM80 800 V < 0.40 14 *nC 11 A STB11NM80 800 V < 0.40 14 *nC 11 A 3 1 3 STW11NM80 800 V < 0.40 14 *nC 11 A 1 2 D2PAK TYPICAL RDS(on) = 0.35 TO-220 LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE CHARGE BEST R ds(on) * Qg IN THE INDUSTRY 2 3 1 3 2 1 TO-220FP TO-247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The 800 V MDmeshTM family is very suitable for sin- gle switch applications in particular for Flyback and Forward converter topologies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP11NM80 P11NM80 TO-220 TUBE STF11NM80 F11NM80 TO-220FP TUBE STB11NM80T4 B11NM80 D2PAK TAPE & REEL STW11NM80 W11NM80 TO-247 TUBE June 2003