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Descr: . Electronic Components Datasheets Active components Transistors CET ces2310.pdf
Group:Electronics > Components > Transistors
Uploaded:08-08-2020
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File name ces2310.pdf

CES2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS

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