KEC khb011n40f1 free download

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SEMICONDUCTOR KHB011N40P1/F1/F2 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB011N40F1 UNIT KHB011N40P1 KHB011N40F2 KHB011N40F1 Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS 30 V @TC=25 10.5 10.5* ID Drain Current @TC=100 6.6 6.6* A Pulsed (Note1) IDP 42 42* Single Pulsed Avalanche Energy EAS 360 mJ (Note 2) Repetitive Avalanche Energy EAR 13.5 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 135 44 W PD Dissipation Derate above25 1.07 0.35 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics KHB011N40F2 Thermal Resistance, Junction-to-Case RthJC 0.93 2.86 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2007. 5. 10