LGE mmbt5551 free download

File name mmbt5551.pdf

MMBT5551 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V Collector-emitter breakdown V(BR)CEO* IC= 1mA, IB=0 160 V voltage Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE1* VCE=5V, IC=1mA 80 DC current gain hFE2* VCE=5V, IC =10mA 100 300 hFE3* VCE=5V, IC=50mA 50 IC=10mA, IB=1mA 0.15 Collector-emitter saturation voltage VCEsat* V IC=50mA, IB=5mA 0.2