HT Semiconductor bc868 free download

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BC868 TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 32 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A hFE(1) VCE=1V,IC=500mA 85 375 DC current gain hFE(2) VCE=1V,IC=1A 60 hFE(3) VCE=10V,IC=5mA 50 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA 0.5 V VBE1 VCE=10V,IC=5mA 0.62 V Base-emitter voltage VBE2 VCE=1V,IC=1A 1 V Transition frequency fT VCE=5V,IC=10mA,f=100MHz 40 MHz CLASSIFICATION OF hFE(1) Rank BC868-10 BC868-16 BC8