ST sts9d8nh3ll free download

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STS9D8NH3LL Dual N-channel 30 V - 0.012 - 9 A - SO-8 low on-resistance STripFETTM Power MOSFET Features Type VDSS RDS(on) Qg ID Q1 30V < 0.022 7nC 8A STS9D8NH3LL Q2 30V < 0.015 8nC 9A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application Switching applications Description Figure 1. Internal schematic diagram This device uses the latest advanced design rules of ST's STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1. Device summary Order code Marking Package Packaging STS9D8NH3LL 9D8H3LL- SO-8 Tape & reel December 2007 Rev 3 1/14 www.st.com 14 Contents STS9D8NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 5 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/14 STS9D8NH3LL Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Type Value Unit Q1 30 V VDS Drain-source voltage (vGS = 0) Q2 30 V Q1