LGE mmbta92 free download

File name mmbta92.pdf

MMBTA92 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance, junction to Ambient 410 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A hFE(1) VCE= -10V, IC= -1mA 60 DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200 hFE(3) VCE= -10V, IC=-30mA 60 Collector-emitter saturation voltage VC