LGE mmmbt2222a sot-23 free download

File name mmmbt2222a_sot-23.pdf

MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=60V, VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB= 3V,IC=0 0.1 A hFE(1) VCE=10V, IC=150mA 100 300 DC current gain hFE(2) VCE=10V, IC= 0.1mA 40 hFE(3) VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA 1 Collector-emitter saturation voltage VCE(sat)