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Descr: . Electronic Components Datasheets Active components Transistors ON Semiconductor ntd5865nl.pdf
Group:Electronics > Components > Transistors
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NTD5865NL N- Channel Power MOSFET - 60 V, 40 A, 16 m Features Low Gate Charge Fast Switching http://onsemi.com High Current Capability 100% Avalanche Tested These Devices are Pb- -Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 16 m @ 10 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 60 V 40 A 19 m @ 4.5 V Parameter Symbol Value Unit Drain--to--Source Voltage VDSS 60 V D Gate--to--Source Voltage -- Continuous VGS 20 V Gate--to--Source Voltage VGS 30 V -- Non--Repetitive (tp < 10 ms) Continuous Drain TC = 25C ID 40 A Current (RJC) G Steady TC = 100C 26 State Power Dissipation TC = 25C PD 52 W (RJC) S N- -CHANNEL MOSFET Pulsed Drain Current tp = 10 ms IDM 137 A Operating Junction and Storage Temperature TJ, Tstg -- 55 to C 4 150 4 Source Current (Body Diode) IS 40 A Single Pulse Drain--to--Source (L = EAS 36 mJ 1 2 Avalanche Energy 0.1 mH) 3 1 IAS 27 A 2 DPAK 3 Lead Temperature for Soldering Purposes TL 260 C CASE 369AA

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