HT Semiconductor mmbt4401 free download

File name mmbt4401.pdf

MMBT4401 TRANSISTOR(NPN) SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55to +150 RJA Thermal Resistance, junction to Ambient 357 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 A Collector cut-off current ICEO VCE=30 V, IB=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V VCE= 10V, IC= 20mA Transition frequency fT 250 MHz