Philips bf1201 r wr free download

File name bf1201_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 NXP Semiconductors Product specification BF1201; BF1201R; N-channel dual-gate PoLo MOS-FETs BF1201WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION 3 handbook, 2 columns 4 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier 3 gate 2 Partly internal self-biasing circuit to 2 1 ensure good cross-modulation 4 gate 1 Top view MSB035 performance during AGC and good DC stabilization. BF1201R marking code: LBp APPLICATIONS Fig.2 Simplified outline VHF and UHF applications with (SOT143R). 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. 4 handbook, 2 columns 3 lfpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and 1 2 2 1 substrate interconnected. Integrated diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1201, BF1201 marking code: LAp. BF1201WR marking code: LA BF1201R and BF1201WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B).