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A94(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO IC= -100A, IE=0 -400 V Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR) EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-400V, IB=0 -5 A Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 A hFE(1) VCE=-10V, IC=-10mA 80 300 DC current gain hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 60 VCE (sat) IC=-10mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE (sat) IC=-50mA, IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-10mA, IB= -1mA -0.75 V VCE=-20V, IC=-10mA Transition frequency fT 50 MHz f =30MHz A94(PNP)