HT Semiconductor ksa1182 free download

File name ksa1182.pdf

KSA1182 TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-100mA 70 240 DC current gain hFE(2) VCE=-6V, IC=-400mA 25 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.25 V Base-emitter voltage VBE VCE=-1V, IC=-100mA -1.0 V Transition frequency fT VCE=-6V, IC=-20mA 200 MHz Collector output capacitance Cob VCB=-6V, IE=0, f=1MHz 13 pF CLASSIFICATION OF hFE(1) Rank O Y Range 70-140