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File name: | ceh2331.pdf [preview ceh2331] |
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Mfg: | CET |
Model: | ceh2331 🔎 |
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Descr: | . Electronic Components Datasheets Active components Transistors CET ceh2331.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 11-08-2020 |
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File name ceh2331.pdf CEH2331 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.2A , RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 60m @VGS = -2.5V. RDS(ON) = 78m @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 TSOP-6 S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS |
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