LGE mjd2955 free download

File name mjd2955.pdf

MJD2955(PNP) TO-251/TO-252-2L Transistor 1.BASE TO-251 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed Switching applications . Electrically simiar to MJD3055. DC current gain specified to10 Amperes TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -70 V Collector-emitter breakdown voltage V(BR)CEO IC=-200 mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V ICBO VCB=-70V,IE=0 -0.02 mA Collector cut-off current ICEO VCB=-30V,IB=0 -50