HT Semiconductor 2sc4116 free download

File name 2sc4116.pdf

2SC4116 TRANSISTOR (NPN) FEATURES SOT-323 High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 100 mW TJ Junction Temperature 150 Tstg Junction and Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=6V,IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V Transition frequency fT VCE=10V,IC=1mA, 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF VCE=6V,Ic=0.1mA, Noise figure NF 10 dB f=1KHZ,Rg=10K CLASSIFICATION OF hFE Rank O