HT Semiconductor 2sd965a free download

File name 2sd965a.pdf

2SD965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units 1 VCBO Collector-Base Voltage 40 V 3. EMITTER 2 VCEO Collector-Emitter Voltage 30 V 3 VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 7 V Collector cut-off current ICBO VCB= 10V,IE=0 0.1 A Emitter cut-off current IEBO VEB=7V, IC=0 0.1 A hFE(1) VCE= 2 V, IC=1mA 200 DC current gain hFE'(2) VCE= 2V, IC = 500mA 230 800 hFE(3) VCE= 2V, IC =2A 150 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V Transition frequency fT VCE=6V, IC=50mA 150 MHz Out capacitance Cob VCB=20 V , IE=0, f=1MHZ 50 pF CLASSIFICATION OF hFE(2) Rank Q R S Range 230-380 340-600 560-800 JinYu www.htsemi.com semiconductor 2SD965A JinYu www.htsemi.com semiconductor