HT Semiconductor 2sc4115 free download

File name 2sc4115.pdf

2SC4115 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 50A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A DC current gain hFE VCE=2V, IC= 0.1A 120 560 Collector-emitter saturation voltage* VCEsat IC= 2A, IB=0.1A 0.5 V VCE=2V, IC=0.5 A Transition frequency fT 200 290 MHz F=100MHz *pulse test CLASSIFICATION OF hFE Rank Q